HUAYI · FETs & Power MOSFETs · MPN HYG032N03LR1C1
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| Gate Charge(Qg) | 61nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 332pF |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 23W |
| Reverse Transfer Capacitance (Crss@Vds) | 277pF |
| RDS(on) | 5.5mΩ@4.5V |
| Number | - |
| Input Capacitance(Ciss) | 2.872nF |
30V 55A 2.5V 23W 5.5mΩ@4.5V DFN-8(3x3) Single FETs, MOSFETs RoHS