HUAYI · FETs & Power MOSFETs · MPN HYG030N03LQ1P
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 57.9nC@10V |
| Output Capacitance(Coss) | 315pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 75W |
| RDS(on) | 4.5mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 303pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.986nF |
| Type | N-Channel |
N-Channel 30V 100A 75W Through Hole TO-220FB-3L