HUAYI · FETs & Power MOSFETs · MPN HYG030N03LQ1D
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| Gate Charge(Qg) | 54.8nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 57W |
| Reverse Transfer Capacitance (Crss@Vds) | 292pF |
| RDS(on) | 4.2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.958nF |
| Type | N-Channel |
N-Channel 30V 100A 57W Surface Mount TO-252-2L