HUAYI · FETs & Power MOSFETs · MPN HYG030N03LQ1C2
No reviews yet — be the first to review HUAYI HYG030N03LQ1C2.
| Drain to Source Voltage | 30V |
|---|---|
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 294pF |
| RDS(on) | 3.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.886nF |
N-Channel 30V 100A 62.5W Surface Mount PDFN5x6-8L