HUAYI · FETs & Power MOSFETs · MPN HYG030N03LQ1B
No reviews yet — be the first to review HUAYI HYG030N03LQ1B.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 57.9nC@10V;31.3nC@4.5V |
| Current - Continuous Drain(Id) | 100A |
| Output Capacitance(Coss) | 315pF |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 303pF |
| RDS(on) | 2.8mΩ@10V;3.8mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.986nF |
| Type | N-Channel |
30V 100A 1.3V 75W 1 N-channel N-Channel TO-263-2L Single FETs, MOSFETs RoHS