HUAYI · FETs & Power MOSFETs · MPN HYG028N10NS1W
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| Gate Charge(Qg) | 168nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 3.618nF |
| Current - Continuous Drain(Id) | 240A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 357.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 238pF |
| RDS(on) | 3.2mΩ@10V |
| Input Capacitance(Ciss) | 9.946nF |
| Type | N-Channel |
100V 240A 4V 357.1W 3.2mΩ@10V N-Channel TO-247A-3L Single FETs, MOSFETs RoHS