HUAYI · FETs & Power MOSFETs · MPN HYG027N04LR1D
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| Gate Charge(Qg) | 97.4nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 95A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 62.5W |
| RDS(on) | 3.1mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 378pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.172nF |
N-Channel 40V 95A 62.5W Surface Mount TO-252-2L