HUAYI · FETs & Power MOSFETs · MPN HYG026N03LS1C2
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| Drain to Source Voltage | 30V |
|---|---|
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 77W |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.532nF |
30V 100A 1.8V 77W 1 N-channel PPAK(5x6) Single FETs, MOSFETs RoHS