HUAYI · FETs & Power MOSFETs · MPN HYG025P03LQ1B
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| Gate Charge(Qg) | 280nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 1.254nF |
| Current - Continuous Drain(Id) | 190A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.314nF |
| RDS(on) | 4.2mΩ@4.5V |
| Number | - |
| Input Capacitance(Ciss) | 14.22nF |
| Type | P-Channel |
30V 190A 3V 200W 4.2mΩ@4.5V P-Channel TO-263-2 Single FETs, MOSFETs RoHS