HUAYI · FETs & Power MOSFETs · MPN HYG025N06LS1P
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| Gate Charge(Qg) | 58.3nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 10.2pF |
| RDS(on) | 4.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.915nF |
| Type | N-Channel |
N-Channel 60V 160A 125W Through Hole TO-220FB-3