HUAYI · FETs & Power MOSFETs · MPN HYG025N04NR1D
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| Drain to Source Voltage | 40V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | 107nC@10V |
| Output Capacitance(Coss) | 804pF |
| Current - Continuous Drain(Id) | 157A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 107W |
| RDS(on) | 2.4mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 696pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.31nF |
N-Channel 40V 157A 107W Surface Mount TO-252-2L