HUAYI · FETs & Power MOSFETs · MPN HYG025N04NA1C2
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 122.2nC@10V |
| Current - Continuous Drain(Id) | 190A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 130W |
| Reverse Transfer Capacitance (Crss@Vds) | 615pF |
| RDS(on) | 1.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.744nF |
| Type | N-Channel |
N-Channel 40V 190A 130W Surface Mount PDFN-8(5x6)