HUAYI · FETs & Power MOSFETs · MPN HYG024N03LR1P
No reviews yet — be the first to review HUAYI HYG024N03LR1P.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 89.8nC@10V |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.992nF |
30V 160A 1V 125W 1 N-channel TO-220FB-3L Single FETs, MOSFETs RoHS