HUAYI · FETs & Power MOSFETs · MPN HYG024N03LR1B
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| Gate Charge(Qg) | 89.8nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 566pF |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF |
| RDS(on) | 3.3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.992nF |
| Type | N-Channel |
N-Channel 30V 160A 125W Surface Mount TO-263-2L