HUAYI · FETs & Power MOSFETs · MPN HYG023N04NR1P
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| Gate Charge(Qg) | 82.5nC@32V |
|---|---|
| Drain to Source Voltage | 45V |
| Current - Continuous Drain(Id) | 179A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 167W |
| Reverse Transfer Capacitance (Crss@Vds) | 533pF |
| RDS(on) | 2.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.466nF |
45V 179A 4V 167W 2.2mΩ@10V 1 N-channel TO-220FB-3L Single FETs, MOSFETs RoHS