HUAYI · FETs & Power MOSFETs · MPN HYG023N04NR1D
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| Gate Charge(Qg) | 82nC@10V |
|---|---|
| Drain to Source Voltage | 45V |
| Output Capacitance(Coss) | 615pF |
| Current - Continuous Drain(Id) | 140A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 485pF |
| RDS(on) | 2.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.412nF |
| Type | N-Channel |
N-Channel 45V 140A 100W Surface Mount TO-252-2L