HUAYI · FETs & Power MOSFETs · MPN HYG023N04NR1B
No reviews yet — be the first to review HUAYI HYG023N04NR1B.
| Gate Charge(Qg) | 83nC@10V |
|---|---|
| Drain to Source Voltage | 45V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 200W |
| RDS(on) | 2.2mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 532pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.474nF |
N-Channel 45V 200A 200W Surface Mount TO-263-2L