HUAYI · FETs & Power MOSFETs · MPN HYG023N04LS1P
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 58.7nC@10V |
| Current - Continuous Drain(Id) | 170A |
| Output Capacitance(Coss) | 809pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 150W |
| RDS(on) | 2.9mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| Input Capacitance(Ciss) | 4.032nF |
| Type | N-Channel |
N-Channel 40V 170A 150W Through Hole TO-220FB