HUAYI · FETs & Power MOSFETs · MPN HYG023N04LS1D
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| Gate Charge(Qg) | 58.7nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 809pF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 75W |
| RDS(on) | 3.5mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.032nF |
| Type | N-Channel |
40V 120A 2.5V 75W 3.5mΩ@4.5V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS