HUAYI · FETs & Power MOSFETs · MPN HYG023N04LQ1P
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| Gate Charge(Qg) | 173.7nC |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 170A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 166W |
| RDS(on) | 3.9mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.832nF |
| Type | N-Channel |
N-Channel 40V 170A 166W Through Hole TO-220FB