HUAYI · FETs & Power MOSFETs · MPN HYG023N03LR1C2
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| Gate Charge(Qg) | 93nC |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 561pF |
| Current - Continuous Drain(Id) | 125A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 462pF |
| RDS(on) | 2.8mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.71nF |
| Type | N-Channel |
N-Channel 30V 125A 62.5W Surface Mount DFN-8(5.2x5.9)