HUAYI · FETs & Power MOSFETs · MPN HYG020N06LS1P
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| Gate Charge(Qg) | 112nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 210A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 230W |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| RDS(on) | 2.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.236nF |
| Type | N-Channel |
60V 210A 2.1V 230W 2.5mΩ@10V 1 N-channel N-Channel TO-220FB-3L Single FETs, MOSFETs RoHS