HUAYI · FETs & Power MOSFETs · MPN HYG020N06LS1B
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 119nC@10V |
| Current - Continuous Drain(Id) | 250A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 119pF |
| RDS(on) | 2.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.25nF |
N-Channel 60V 250A 300W Surface Mount TO-263-2L