HUAYI · FETs & Power MOSFETs · MPN HYG020N04NR1P
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| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 220A |
| Output Capacitance(Coss) | 806pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 707pF |
| RDS(on) | 1.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.392nF |
| Type | N-Channel |
40V 220A 2.6V 200W 1.9mΩ@10V 1 N-channel N-Channel TO-220FB-3L Single FETs, MOSFETs RoHS