HUAYI · FETs & Power MOSFETs · MPN HYG020N04NA1P
No reviews yet — be the first to review HUAYI HYG020N04NA1P.
| Gate Charge(Qg) | 134.2nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 820pF |
| Current - Continuous Drain(Id) | 220A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 650pF |
| RDS(on) | 2.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.755nF |
| Type | N-Channel |
40V 220A 4V 200W 2.3mΩ@10V 1 N-channel N-Channel TO-220FB-3L Single FETs, MOSFETs RoHS