HUAYI · FETs & Power MOSFETs · MPN HYG020N04NA1B
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| Gate Charge(Qg) | 134.2nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 820pF |
| Current - Continuous Drain(Id) | 220A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 650pF |
| RDS(on) | 2.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.755nF |
| Type | N-Channel |
N-Channel 40V 220A 200W Surface Mount TO-263-2L