HUAYI · FETs & Power MOSFETs · MPN HYG019N06LS1C2
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| Gate Charge(Qg) | 79.2nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.15nF |
| Current - Continuous Drain(Id) | 210A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 166.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 40.4pF |
| RDS(on) | 1.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.044nF |
| Type | N-Channel |
N-Channel 60V 210A 166.6W Surface Mount PDFN-8(5x6)