HUAYI · FETs & Power MOSFETs · MPN HYG019N04NR1C2
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| Gate Charge(Qg) | 72.4nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 969pF |
| Current - Continuous Drain(Id) | 127A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 79W |
| Reverse Transfer Capacitance (Crss@Vds) | 423pF |
| RDS(on) | 2.5mΩ@10V |
| Input Capacitance(Ciss) | 3.384nF |
| Type | N-Channel |
40V 127A 4V 79W 2.5mΩ@10V N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS