HUAYI · FETs & Power MOSFETs · MPN HYG018N10NS1B6
No reviews yet — be the first to review HUAYI HYG018N10NS1B6.
| Gate Charge(Qg) | 205nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 5.45nF |
| Current - Continuous Drain(Id) | 322A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 208pF |
| RDS(on) | 1.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12.57nF |
| Type | N-Channel |
100V 322A 4V 375W 1.7mΩ@10V 1 N-channel N-Channel TO-263-6 Single FETs, MOSFETs RoHS