HUAYI · FETs & Power MOSFETs · MPN HYG017N10NS1TA
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| Gate Charge(Qg) | 217nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 330A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 428.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 408pF |
| RDS(on) | 1.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.88nF |
N-Channel 100V 330A 428.5W Surface Mount TOLL-8L