HUAYI · FETs & Power MOSFETs · MPN HYG017N04NR1B6
No reviews yet — be the first to review HUAYI HYG017N04NR1B6.
| Drain to Source Voltage | 45V |
|---|---|
| Gate Charge(Qg) | 161nC@10V |
| Current - Continuous Drain(Id) | 320A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.126nF |
| RDS(on) | 1.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.382nF |
N-Channel 45V 320A 300W Surface Mount TO-263-6L