HUAYI · FETs & Power MOSFETs · MPN HYG016N10NS1TA
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| Gate Charge(Qg) | 217nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 5.1nF |
| Current - Continuous Drain(Id) | 370A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 428.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 275pF |
| RDS(on) | 1.35mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.72nF |
| Vgs | ±20V |
N-Channel 100V 370A 428.5W Surface Mount TOLL-8L