HUAYI · FETs & Power MOSFETs · MPN HYG016N04NR1B
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| Drain to Source Voltage | 45V |
|---|---|
| Gate Charge(Qg) | 153nC |
| Current - Continuous Drain(Id) | 240A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 200W |
| RDS(on) | 1.4mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 1nF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.06nF |
N-Channel 45V 240A 200W Surface Mount TO-263-2L