HUAYI · FETs & Power MOSFETs · MPN HYG016N04LS1W
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| Gate Charge(Qg) | 90nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 290A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.538nF |
| Type | N-Channel |
N-Channel 40V 290A 250W Through Hole TO-247A-3L