HUAYI · FETs & Power MOSFETs · MPN HYG016N04LS1P
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| Gate Charge(Qg) | 92.5nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.276nF |
| Current - Continuous Drain(Id) | 240A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 200W |
| RDS(on) | 2.2mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.894nF |
| Type | N-Channel |
40V 240A 3V 200W 2.2mΩ@4.5V 1 N-channel N-Channel TO-220FB-3 Single FETs, MOSFETs RoHS