HUAYI · FETs & Power MOSFETs · MPN HYG015N10NS1TA
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| Gate Charge(Qg) | 205nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 380A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 214.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF |
| RDS(on) | 1.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12.3nF |
| Type | N-Channel |
N-Channel 100V 380A 214.3W Surface Mount TOLL-8L