HUAYI · FETs & Power MOSFETs · MPN HYG015N04LS1C2
No reviews yet — be the first to review HUAYI HYG015N04LS1C2.
| Gate Charge(Qg) | 59nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 150A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 2.4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.05nF |
| Type | N-Channel |
N-Channel 40V 150A 75W Surface Mount PDFN5x6-8L