HUAYI · FETs & Power MOSFETs · MPN HYG015N03LS2C2
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 44.7nC@10V |
| Current - Continuous Drain(Id) | 140A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 65W |
| Reverse Transfer Capacitance (Crss@Vds) | 9.2pF |
| RDS(on) | 3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.011nF |
| Type | N-Channel |
N-Channel 30V 140A 65W Surface Mount PDFN5x6-8L