HUAYI · FETs & Power MOSFETs · MPN HYG015N03LS1C2
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| Gate Charge(Qg) | 33.4nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Configuration | - |
| Current - Continuous Drain(Id) | 130A |
| Output Capacitance(Coss) | 511pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF |
| RDS(on) | 3.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.164nF |
N-Channel 30V 130A 62.5W Surface Mount PDFN5x6-8L