HUAYI · FETs & Power MOSFETs · MPN HYG015N03LR1P
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 104nC@10V |
| Current - Continuous Drain(Id) | 170A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 480pF |
| RDS(on) | 2.4mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.05nF |
N-Channel 30V 170A 125W Through Hole TO-220FB-3L