HUAYI · FETs & Power MOSFETs · MPN HYG014N03LR1P
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 182.8nC@10V |
| Output Capacitance(Coss) | 1.192nF |
| Current - Continuous Drain(Id) | 275A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 167W |
| RDS(on) | 2.2mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 1.066nF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.766nF |
| Type | N-Channel |
N-Channel 30V 275A 167W Through Hole TO-220FB-3L