HUAYI · FETs & Power MOSFETs · MPN HYG013N04NR1B6
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 207.9nC@10V |
| Current - Continuous Drain(Id) | 377A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 333W |
| RDS(on) | 1.1mΩ@10V |
| Number | 1 N-channel |
40V 377A 4V 333W 1.1mΩ@10V 1 N-channel TO-263-6 Single FETs, MOSFETs RoHS