HUAYI · FETs & Power MOSFETs · MPN HYG013N04NA1P
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| Gate Charge(Qg) | 265nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 1.502nF |
| Current - Continuous Drain(Id) | 260A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 230W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.05nF |
| RDS(on) | 1.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.62nF |
| Type | N-Channel |
40V 260A 4V 230W 1.6mΩ@10V 1 N-channel N-Channel TO-220FB Single FETs, MOSFETs RoHS