HUAYI · FETs & Power MOSFETs · MPN HYG013N04NA1B6
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| Gate Charge(Qg) | 265nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 354A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 326W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.028nF |
| RDS(on) | 1.3mΩ@10V |
| Input Capacitance(Ciss) | 12.097nF |
| Type | N-Channel |
40V 354A 4V 326W 1.3mΩ@10V N-Channel TO-263-6 Single FETs, MOSFETs RoHS