HUAYI · FETs & Power MOSFETs · MPN HYG012N08NS1TA
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 240nC@10V |
| Current - Continuous Drain(Id) | 420A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 428.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 470pF |
| RDS(on) | 1.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12.217nF |
| Type | N-Channel |
N-Channel 80V 420A 428.5W Surface Mount TOLL