HUAYI · FETs & Power MOSFETs · MPN HYG012N03LR1TA
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 175nC@10V |
| Output Capacitance(Coss) | 1.16nF |
| Current - Continuous Drain(Id) | 380A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 234W |
| RDS(on) | 1.4mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 913pF |
| Input Capacitance(Ciss) | 7.796nF |
| Type | N-Channel |
30V 380A 3V 234W 1.4mΩ@4.5V N-Channel TOLL Single FETs, MOSFETs RoHS