HUAYI · FETs & Power MOSFETs · MPN HYG012N03LR1B
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 187.9nC@10V |
| Current - Continuous Drain(Id) | 250A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 187.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 809pF |
| RDS(on) | 1.7mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.123nF |
| Type | N-Channel |
N-Channel 30V 250A 187.5W Surface Mount TO-263-2L