HUAYI · FETs & Power MOSFETs · MPN HYG011N04LS2C2
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| Output Capacitance(Coss) | 824pF |
|---|---|
| Pd - Power Dissipation | 150W |
| Gate Charge(Qg) | 56.5nC |
| Configuration | - |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 1.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.878nF |
150W 40V 1.8V 1.1mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS