HUAYI HYG011N04LS1TA

HUAYI · FETs & Power MOSFETs · MPN HYG011N04LS1TA

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Specifications

Gate Charge(Qg)92nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)320A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)63pF
RDS(on)1.7mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.87nF
TypeN-Channel

Technical details

N-Channel 40V 320A 250W Surface Mount TOLL

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