HUAYI · FETs & Power MOSFETs · MPN HYG011N04LS1B6
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| Drain to Source Voltage | 40V |
|---|---|
| Gate Charge(Qg) | 94.8nC@10V |
| Current - Continuous Drain(Id) | 320A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 240W |
| RDS(on) | 0.92mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.774nF |
40V 320A 1.8V 240W 0.92mΩ@10V 1 N-channel TO-263-6L Single FETs, MOSFETs RoHS